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4.8 v npn silicon bipolar common emitter transistor technical data features ? 4.8 volt pulsed (pulse width = 577 m sec, duty cycle = 12.5%)/cw operation ? +28 dbm pulsed p out @ 900 mhz, typ. ? +23.5 dbm cw p out @ 836.5 mhz, typ. ? 60% pulsed collector efficiency @ 900 mhz, typ. ? 11 db pulsed power gain @ 900 mhz, typ. ? -35 dbc imd 3 @ p out of 17 dbm per tone, 900 mhz, typ. applications ? driver amplifier for gsm and amps/etacs/ 900 mhz nmt cellular phones ? 900 mhz ism and special mobile radio AT-38086 description agilents AT-38086 is a low cost, npn silicon bipolar junction transistor housed in a surface mount plastic package. this device is designed for use as a pre-driver or driver device in applications for cellular and wireless communications markets. at 4.8 volts, the AT-38086 features +28 dbm pulsed output power, class ab operation, and +23.5 dbm cw. superior efficiency and gain makes the AT-38086 an excellent choice for battery powered systems. the AT-38086 is fabricated with agilents 10 ghz f t self-aligned- transistor (sat) process. the die are nitride passivated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices. 85 mil plastic surface mount package outline 86 pin configuration 4 emitter 1 base 3 collector 2 emitter
2 AT-38086 absolute maximum ratings absolute symbol parameter units maximum [1] v ebo emitter-base voltage v 1.4 v cbo collector-base voltage v 16.0 v ceo collector-emitter voltage v 9.5 i c collector current [2] ma 250 i c collector current [3] ma 160 p t peak power dissipation [2, 4] w 3.7 p t cw power dissipation [3, 5] mw 460 t j junction temperature c 150 t stg storage temperature c -65 to 150 thermal resistance [6] : q jc = 140 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. pulsed operation, pulse width = 577 m sec, duty cycle = 12.5%. 3. cw operation. 4. derate at 57.1 mw/ c for t c >85 c. t c is defined to be the temperature of the collector pin 3, where the lead contacts the circuit board. 5. derate at 7.1 mw/ c for t c >85 c. t c is defined to be the temperature of the collector pin 3, where the lead contacts the circuit board. 6. using the liquid crystal technique, v ce = 4.5 v, i c = 50 ma, t j =150 c, 1-2 m m hot-spot resolution. electrical specifications, t c = 25 c symbol parameters and test conditions units min. typ. max. freq. = 900 mhz, v ce = 4.8 v, i cq = 20 ma, pulse width = 577 m sec, duty cycle = 12.5%, unless otherwise specified p out output power, test circuit a, p in = +17 dbm dbm +26.5 +28.0 pulsed operation [1] h c collector efficiency, test circuit a, p in = +17 dbm % 50 60 pulsed operation [1] mismatch tolerance test circuit a, p out = +28 dbm, 7:1 no damage, pulsed [1] any phase, 2 sec duration p out output power, f = 836.5 mhz, i cq = 15 ma dbm +22.0 +23.5 cw operation [2] test circuit b, p in = +10 dbm imd 3 3rd order intermodulation distortion, f1 = 899 mhz, f2 = 901 mhz dbc -35 2-tone test, p out each tone = +17 dbm, cw [2,3] i cq = 15 ma, test circuit b mismatch tolerance, no damage , f = 836.5 mhz, i cq = 15 ma 7:1 cw [2] test circuit b, p out = +23.5 dbm any phase, 2 sec duration bv ebo emitter-base breakdown voltage i e = 0.2 ma, open collector v 1.4 bv cbo collector-base breakdown voltage i c = 1.0 ma, open emitter v 16.0 bv ceo collector-emitter breakdown voltage i c = 3.0 ma, open base v 9.5 h fe forward current transfer ratio v ce = 3 v, i c = 160 ma 40 150 330 i ceo collector leakage current v ceo = 5 v m a15 notes: 1. with external matching on input and output, tested in a 50 ohm environment. refer to test circuit a (gsm). 2. with external matching on input and output, tested in a 50 ohm environment. refer to test circuit b (amps). 3. test circuit b re-tuned at 900 mhz.
3 AT-38086 typical performance, t c = 25 c frequency = 900 mhz, v ce = 4.8 v, i cq = 20 ma, pulsed operation, pulse width = 577 m sec, duty cycle = 12.5%, test circuit a (gsm), unless otherwise specified 0 100 214 12 6 410 818 16 24 22 20 output power (dbm) collector efficiency (%) input power (dbm) figure 1. output power and collector efficiency vs. input power. output power (dbm) input power (dbm) figure 2. output power vs. input power over bias voltage. collector efficiency (%) input power (dbm) figure 3. collector efficiency vs. input power over bias voltage. figure 5. output power and collector efficiency vs. frequency. note: tuned at 900 mhz, then swept over frequency. figure 6. input and output return loss vs. frequency. 10 16 12 14 18 24 22 20 p out g source = 0.75 e -177 g load = 0.48 e +161 20 22 24 26 32 28 30 output power (dbm) input power (dbm) figure 4. output power vs. input power over temperature. t c = +85 c t c = +25 c t c = ?0 c 3.6 v 4.8 v 6.0 v g source = 0.75 e -177 g load = 0.48 e +161 g source = 0.75 e -177 g load = 0.48 e +161 27.0 27.2 27.4 27.6 29.0 27.8 28.0 28.2 28.4 28.6 28.8 55 59 75 63 67 71 output power (dbm) frequency (mhz) 880 g source = 0.75 e -177 g load = 0.48 e +161 -16 -14 -12 -10 0 -8 -6 -4 -2 return loss (db) collector efficiency (%) frequency (mhz) 800 850 950 1000 900 890 910 920 900 output r.l. input r.l. h c p out p in = +17 dbm h c 12 14 16 18 32 20 22 24 26 28 30 10 20 30 40 50 60 70 80 90 214 12 6 410 818 16 24 22 20 g source = 0.75 e -177 g load = 0.48 e +161 12 14 16 18 32 20 22 24 26 28 30 3.6 v 4.8 v 6.0 v 214 12 6 410 818 16 24 22 20 g source = 0.75 e -177 g load = 0.48 e +161 0 10 20 30 90 40 50 60 70 80
4 AT-38086 typical performance, t c = 25 c freq. = 836.5 mhz, v ce = 4.8 v, i cq = 15 ma, cw operation, test circuit b (amps), unless otherwise specified 20 30 40 50 60 90 70 80 28 4 6 10 12 14 16 17 output power (dbm) collector efficiency (%) input power (dbm) figure 7. output power and collector efficiency vs. input power. output power (dbm) input power (dbm) figure 8. output power vs. input power over bias voltage. collector efficiency (%) input power (dbm) figure 9. collector efficiency vs. input power over bias voltage. 15 17 19 29 27 25 21 23 figure 11. input and output return loss vs. frequency. 28 4 6 10 12 14 16 17 p out h c g source = 0.86 e -180 g load = 0.46 e +128 g source = 0.86 e -180 g load = 0.46 e +128 14 16 18 20 22 28 24 26 output power (dbm) input power (dbm) figure 10. output power vs. input power over temperature. t c = +85 c t c = +25 c t c = ?0 c -14 -12 -10 -8 -6 0 -4 -2 14 16 18 20 22 28 24 26 28 4 6 10 12 14 16 17 g source = 0.86 e -180 g load = 0.46 e +128 3.6 v 4.8 v 6.0 v 28 4 6 10 12 14 16 17 g source = 0.86 e -180 g load = 0.46 e +128 3.6 v 4.8 v 6.0 v 10 20 30 40 90 50 60 70 80 imd (dbc) output power/tone (dbm) figure 12. imd3, imd5 vs. output power per tone. note: test circuit b (amps) used and re-tuned at 900 mhz. 511 7 9 13 15 17 19 22 21 g source = 0.87 e -178 g load = 0.48 e +126 g source = 0.86 e -180 g load = 0.46 e +128 return loss (db) frequency (mhz) 750 800 900 850 950 836.5 output r.l. imd3 imd5 input r.l. -50 -45 -40 -35 0 -30 -25 -20 -15 -10 -5
5 AT-38086 typical large signal impedances (gsm) freq. = 900 mhz, v ce = 4.8 v, i cq = 20 ma, pulsed operation, p out = +28.0 dbm freq. g source g load mhz mag. ang. mag. ang. 880 0.743 -175.6 0.474 162.0 890 0.741 -176.4 0.476 161.5 900 0.747 -177.3 0.478 161.2 910 0.751 -178.1 0.481 160.0 915 0.752 -178.6 0.482 159.6 920 0.754 -179.1 0.483 158.9 spice model parameters die model packaged model AT-38086 typical large signal impedances (amps) freq. = 836.5 mhz, v ce = 4.8 v, i cq = 15 ma, cw operation, p out = +23.5 dbm freq. g source g load mhz mag. ang. mag. ang. 824 0.856 -178.9 0.455 129.1 836.5 0.864 -179.9 0.459 128.2 849 0.870 -179.1 0.464 127.3 c cpad cpad die area = 0.67 cpad = 0.36 pf e1 b e2 cpad bf ikf ise ne vaf nf tf xtf vtf itf ptf xtb br ikr isc nc var value 280 299.9 9.9e-11 2.399 33.16 0.9935 1.6e-11 0.006656 0.02785 0.001 23 0 54.61 81 8.7e-13 1.587 1.511 nr tr eg is xti cjc vjc mjc xcjc fc cje vje mje rb re rc value 0.9886 1e-9 1.11 3.598e-15 3 1.02 pf 0.4276 0.2508 0.001 0.999 0.98 pf 0.811 0.596 5.435 1.30 0.01 label label c c cbc cbe cce l1 l3 label cbe cbc cce l1 l2 l3 lb le value 0.032 pf 0.036 pf 0.122 pf 0.46 nh 0.46 nh 0.46 nh 0.47 nh 0.14 nh lb e1 e le l2 b b e2 1.5 1.7 1.9 3.5 2.9 3.1 3.3 2.5 2.7 2.1 2.3 023 19 45678 ccb (pf) vcb (v) figure 13. collector-base capacitance vs. collector-base voltage (dc test).
6 AT-38086 typical scattering parameters, common emitter, z o = 50 w v ce = 3.6 v, i c = 50 ma, t c = 25 c freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.05 0.71 -85 31.7 38.52 138 -31.7 0.026 54 0.75 -57 0.10 0.73 -124 28.2 25.72 118 -29.1 0.035 39 0.56 -90 0.25 0.75 -160 21.3 11.66 84 -27.3 0.043 35 0.39 -133 0.50 0.76 -176 15.5 5.95 76 -25.5 0.053 43 0.36 -155 0.75 0.76 175 12.0 3.98 72 -23.6 0.066 50 0.36 -165 0.90 0.77 171 10.4 3.32 69 -22.6 0.074 52 0.36 -168 1.00 0.77 169 9.5 2.99 63 -22.0 0.079 54 0.37 -170 1.25 0.78 164 7.6 2.39 57 -20.5 0.094 56 0.38 -174 1.50 0.78 160 6.0 1.99 51 -19.3 0.108 57 0.40 -176 1.75 0.79 156 4.7 1.71 46 -18.3 0.122 57 0.41 -179 2.00 0.80 152 3.5 1.49 41 -17.3 0.137 57 0.43 179 2.25 0.80 148 2.5 1.33 37 -16.4 0.151 57 0.45 176 2.50 0.81 145 1.5 1.19 32 -15.7 0.164 56 0.47 174 2.75 0.81 142 0.7 1.08 28 -15.0 0.178 55 0.49 172 3.00 0.82 139 -0.1 0.99 25 -14.4 0.191 54 0.51 169 v ce = 4.8 v, i c = 50 ma, t c = 25 c 0.05 0.72 -82 31.8 39.02 139 -31.7 0.026 54 0.76 -55 0.10 0.73 -121 28.4 26.32 119 -29.1 0.035 40 0.56 -87 0.25 0.75 -158 21.6 12.00 97 -27.3 0.043 35 0.38 -130 0.50 0.75 -176 15.8 6.14 85 -25.5 0.053 43 0.35 -154 0.75 0.76 176 12.3 4.10 76 -23.7 0.065 49 0.35 -163 0.90 0.76 172 10.7 3.42 72 -22.7 0.073 52 0.35 -167 1.00 0.76 169 9.8 3.08 69 -22.0 0.079 53 0.36 -169 1.25 0.77 164 7.8 2.46 63 -20.6 0.093 56 0.37 -172 1.50 0.78 160 6.2 2.05 57 -19.4 0.107 57 0.38 -175 1.75 0.78 156 4.9 1.76 51 -18.3 0.121 58 0.40 -178 2.00 0.79 152 3.8 1.54 46 -17.4 0.135 57 0.42 180 2.25 0.80 149 2.7 1.37 41 -16.5 0.150 57 0.44 177 2.50 0.80 145 1.8 1.23 37 -15.8 0.163 56 0.46 175 2.75 0.81 142 1.0 1.12 32 -15.0 0.177 55 0.48 173 3.00 0.82 139 0.2 1.02 28 -14.4 0.190 55 0.50 170 v ce = 6.0 v, i c = 50 ma, t c = 25 c 0.05 0.73 -79 31.8 39.07 140 -32.0 0.025 55 0.76 -54 0.10 0.74 -119 28.5 26.60 120 -29.1 0.035 40 0.56 -85 0.25 0.74 -157 21.7 12.21 98 -27.3 0.043 35 0.38 -128 0.50 0.75 -175 15.9 6.25 85 -25.5 0.053 42 0.34 -152 0.75 0.75 176 12.4 4.18 76 -23.7 0.065 49 0.34 -162 0.90 0.76 172 10.8 3.48 72 -22.7 0.073 52 0.34 -166 1.00 0.76 170 9.9 3.13 69 -22.2 0.078 53 0.34 -167 1.25 0.77 165 8.0 2.51 63 -20.7 0.092 56 0.36 -171 1.50 0.77 160 6.4 2.09 57 -19.5 0.106 57 0.37 -174 1.75 0.78 156 5.1 1.79 51 -18.4 0.120 57 0.39 -177 2.00 0.79 152 3.9 1.56 46 -17.5 0.134 58 0.41 -179 2.25 0.79 149 2.9 1.39 41 -16.6 0.148 57 0.43 178 2.50 0.80 146 1.9 1.25 37 -15.8 0.162 56 0.45 176 2.75 0.81 142 1.1 1.13 32 -15.1 0.175 56 0.47 174 3.00 0.81 139 0.3 1.03 28 -14.5 0.188 55 0.49 171
7 typical performance gain (db) frequency (ghz) figure 14. insertion power gain, maximum available gain, and maximum stable gain vs. frequency. v ce = 3.6 v, i c = 50 ma. 0 5 10 35 30 25 15 20 gain (db) frequency (ghz) figure 16. insertion power gain, maximum available gain, and maximum stable gain vs. frequency. v ce = 6.0 v, i c = 50 ma. 0 5 10 35 30 25 15 20 0.05 1.00 0.25 0.75 1.50 3.00 2.50 2.00 -5 5 0 10 15 35 30 20 25 msg mag |s 21 | 2 gain (db) frequency (ghz) figure 15. insertion power gain, maximum available gain, and maximum stable gain vs. frequency. v ce = 4.8 v, i c = 50 ma. 0.05 1.00 0.25 0.75 1.50 3.00 2.50 2.00 0.05 1.00 0.25 0.75 1.50 3.00 2.50 2.00 msg mag |s 21 | 2 msg mag |s 21 | 2 part number ordering information part number no. of devices container AT-38086-tr1 1000 7" reel AT-38086-blk 100 antistatic bag 4 0.38/0.64 (.015/.025) 1.96/2.72 (.077/.107) 2.16/3.05 (.085/.120) 1 c l c l 3 2 2.03/2.29 (.080/.090) dimensions are in millimeters (inches) 1.27/1.78 (.050/.070) 0.53/0.79 (.021/.031) 0.15/0.25 (.006/.010) package dimensions outline 86
8 test circuit a: test circuit board layout @ 900 mhz for pulsed operation (gsm) v bb t1 r2 c2 c3 r1 l1 c5 c6 c10 c7 l2 r3 r5 v cc v cc c8 c9 c1 c2 c3 c4 c5 c6 c7 c8 c9 c10 r1 r2 r3 r4 r5 t1 l1 l2 100.0 pf 100.0 pf 100.0 nf 8.2 pf 100.0 nf 100.0 pf 3.6 pf 1.5 f 10.0 f 100.0 pf 10.0 619.0 10.0 40.0 10.0 mbt 2222a 18.0 h 18.0 h 9/96 output input b?fg0139 r4 c4 c1 pa1 demo 76.2 (3.0) 38.1 (1.5) v bb pulse test v ce = 4.8 v i cq = 20 ma freq. = 900 mhz test circuit: fr-4 microstrip, glass epoxy board dielectric constant = 4.5 thickness = 0.79 (.031) note: dimensions are shown in millimeters (inches). test circuit a: test circuit schematic diagram @ 900 mhz for pulsed operation (gsm) 619 v bb v cc 10 rf in 100 pf 100 nf 10 80 40 80 50 50 l /4 @ 900 mhz l /4 @ 900 mhz 18 h b ce dc transistor 100 pf 100 pf 8.2 pf = 6.53 (.257) 100 pf rf out 3.6 pf = 19.00 (.748) 10 18 h 100 nf 1.5 f 10 f pulse test v ce = 4.8 v i cq = 20 ma freq. = 900 mhz
9 test circuit b: test circuit board layout @ 836.5 mhz for cw operation (amps) v bb v cc v cc c7 c8 c1 c2 c3 c4 c5 c6 c7 c8 c9 c10 r1 r2 r3 r4 r5 t1 l1 l2 100.0 pf 100.0 nf 11.0 pf 100.0 pf 100.0 pf 100.0 nf 1.5 f 10.0 f 4.7 pf 100.0 pf 10.0 619.0 10.0 40.0 10.0 mbt 2222a 18.0 h 18.0 h 9/96 output input b?fg0139 pa1 demo 76.2 (3.0) 38.1 (1.5) v bb cw test v ce = 4.8 v i cq = 15 ma freq. = 836.5 mhz test circuit: fr-4 microstrip, glass epoxy board dielectric constant = 4.5 thickness = 0.79 (.031) note: dimensions are shown in millimeters (inches). c6 c2 c5 c4 r4 c10 c9 c3 c1 l2 l1 r5 r3 r1 t1 r2 test circuit b: test circuit schematic diagram @ 836.5 mhz for cw operation (amps) 619 v bb v cc 10 rf in 100 pf 100 nf 10 80 40 80 50 50 l /4 @ 836.5 mhz l /4 @ 836.5 mhz 18 h b ce dc transistor 100 pf 100 pf 11.0 pf = 9.02 (.355) 100 pf rf out 4.7 pf = 32.66 (1.286) 10 18 h 100 nf 1.5 f 10 f cw test v ce = 4.8 v i cq = 15 ma freq. = 836.5 mhz
10 tape dimensions and product orientation for outline 86 user feed direction cover tape carrier tape reel 12 mm 1 note: 1 indicates pin 1 orientation a b t c w f e p 2 10 pitches cumulative tolerance on tape 0.2 mm user feed direction p 0 d 0 cover tape t p 1 d 1 k description symbol size (mm) size (inches) length width depth pitch bottom hole diameter a b k p 1 d 1 5.77 0.10 6.10 0.10 1.70 0.10 8.00 0.10 1.50 min. 0.227 0.004 0.240 0.004 0.067 0.004 0.314 0.004 0.059 min. cavity diameter pitch position d 0 p 0 e 1.50 + 0.10/-0.05 4.00 0.10 1.75 0.10 0.059 + 0.004/-0.002 0.157 0.004 0.069 0.004 perforation width thickness w t 12.00 0.20 0.30 0.05 0.472 0.008 0.012 0.002 carrier tape cavity to perforation (width direction) cavity to perforation (length direction) f p 2 5.50 0.05 2.00 0.05 0.217 0.002 0.079 0.002 distance between centerline width tape thickness c t 9.30 0.10 0.065 0.010 0.366 0.004 0.0026 0.0004 cover tape
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies obsoletes 5965-5959e 5966-3835e (11/99)

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